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APT11GF120KR
1200V 22A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
TO-220
* Low Forward Voltage Drop * Low Tail Current * Avalanche Rated
MAXIMUM RATINGS
Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
* High Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated
G
C
E
C G E
All Ratings: TC = 25C unless otherwise specified.
APT11GF120KR UNIT
1200 1200 15 20 22 11 44 22 10 125 -55 to 150 300
C mJ Watts Amps Volts
Collector-Gate Voltage (RGE = 20KW) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current Pulsed Collector Current
1 1
@ TC = 25C @ TC = 110C
2
Single Pulse Avalanche Energy Total Power Dissipation
Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.4mA) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 350A, Tj = 25C) MIN TYP MAX UNIT
1200 -15 4.5 5.5 2.5 3.1 6.5 3.0 3.7 0.4
052-6213 Rev B 12-2000
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V)
I CES I GES
2.0 100
mA nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT11GF120KR
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25C) VGE = 15V VCC = 0.8VCES I C = I C2 RG = 10W MIN TYP MAX UNIT
600 70 38 55 35 6 10 45 55 110 13
800 105 55
pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance
nC
ns
Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +150C
12 125 90 .45 1.00 1.45
ns
mJ
Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +25C VCE = 20V, I C = I C2
13 12 110 90 1.0 4.7
mJ S ns
THERMAL CHARACTERISTICS
Symbol RQJC RQJA Torque
1 2
Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN
TYP
MAX
UNIT C/W
1.00 80 10
lb*in
Repetitive Rating: Pulse width limited by maximum junction temperature. IC = 15A, RGE = 25W, L = 300H, Tj = 25C See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6213 Rev B 12-2000
3

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